GaN/Si Epiwafers-GaN Substrate
GaN-on-Si wafers have grown in popularity in the production of High Electron Mobility Transistors (HEMT). It and related binaries InN and AlN, as well as ternary compounds.
GaN-on-Si wafers have grown in popularity in the production of High Electron Mobility Transistors (HEMT). It and related binaries InN and AlN, as well as ternary compounds.
Contents
Item | Criteria | Typical | Uniformit | Condition | Standard |
Crystal Quality of GaN buffer (arcsec) | |||||
XRC FWHM(002) | ≤800 | 700 | XRD | ||
XRC FWHM(102) | ≤1200 | 900 | XRD | ||
2DEG transport properties | |||||
Mobility | ≥1800 | 1900 | Hall | ||
Concentration | ≥9E12 | 1E13 | Hall | ||
Rsh | ≤350 | 300 | Hall | ||
Wafer Profile and Surface characteristics | |||||
Wafer Bow | ≤30 | ≤20 | PL mapping | ||
Total Defect | |||||
Edge Crack | ≤3 mm | 1mm | |||
Scratch | No | No | |||
RMS @5×5 μm2 | ≤0.5 nm | 0.3 nm | AFM |
GaN/Si Epiwafers
Wafer Size and Epi-Structure
1. light emitters of UV through green wavelengths
2. optical detectors
3. microwave communication
4. high power applications.
*Power HEMT
*RF HEMT
*GaN Diode
E-Mode usually has better performance than D-Mode. Scientists have used the following:
Pls see below for 4” and 6” 650V Power HEMT GaN epi wafer
1. 4” GaN-Si Epi wafer for 650V Power HEMTs
2. 6” GaN-Si Epi wafer for 650V Power HEMTs
Contact us for pricing.
Maybe in the future ,but Silicon wafers also have unique uses.
Power density is greatly improved in gallium nitride devices compared to silicon ones because GaN has the capacity to sustain much higher switching frequencies. It also has an increased ability to sustain elevated temperatures
It is made with original HVPE method and wafer processing technology, which has been originally developed for many years. The features are high crystalline, good uniformity, and superior surface quality. GaN substrates are used for LD applications (violet, blue and green).