• Colorless Transparent Silicon Carbide Wafer High Purity Silicon Carbide SiC Wafers Lens
  • Colorless Transparent Silicon Carbide Wafer High Purity Silicon Carbide SiC Wafers Lens
  • Colorless Transparent Silicon Carbide Wafer High Purity Silicon Carbide SiC Wafers Lens
  • Colorless Transparent Silicon Carbide Wafer High Purity Silicon Carbide SiC Wafers Lens
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Colorless Transparent Silicon Carbide Wafer High Purity Silicon Carbide SiC Wafers Lens

Colorless Transparent Silicon Carbide Wafer High Purity Silicon Carbide SiC Wafers Lens

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Colorless Transparent Silicon Carbide Wafer High Purity Silicon Carbide SiC Wafers Lens

Our Silicon Carbide (SiC) power solutions provide the lowest system cost, fastest time to market and lowest risk. Our solutions include the industry’s broadest and most flexible portfolio of SiC diodes, MOSFETs and gate drivers in bare die, discrete, module and customizable power module forms. With years of experience in the development, design and support of SiC devices and power solutions, we can help you adopt SiC with ease, speed and confidence.

Colorless Transparent Silicon Carbide Wafer High Purity Silicon Carbide SiC Wafers Lens

Products – Silicon Carbide Wafer

  • High Light:silicon carbide substrate, sic wafer
  • Material:SiC Single Crystal 4H-N Type
  • Grade:Dummy / Research /Production Grade
  • Thicnkss:350um Or 500um
  • Suraface:CMP/MP
  • Application:Device Maker Polishing Test
  • Diameter:100±0.3mm
  • Place of Origin:CHINA
  • Brand Name:ZMKJ
  • Model Number:4inch high purity
  • Minimum Order Quantity:1pcs
  • Packaging Details:single wafer package in 100-grade cleaning room
  • Delivery Time:1-6weeks
  • Payment Terms:T/T, Western Union, MoneyGram
  • Supply Ability:1-50pcs/month

Resistivity1E10 colorless transparent high purity 2/3/4/6inch Silicon Carbide SiC wafers lens

colorless transparent high purity 2/3/4/6inch Silicon Carbide SiC wafers lens  High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer/ Customzied as-cut sic wafers

About Silicon Carbide (SiC)Crystal  

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

PROPERTIES of 4H-SiC Single Crystal

  • Lattice Parameters: a=3.073Å c=10.053Å
  • Stacking Sequence: ABCB
  • Mohs Hardness: ≈9.2
  • Density: 3.21 g/cm3
  • Therm. Expansion Coefficient: 4-5×10-6/K
  • Refraction Index: no= 2.61 ne= 2.66
  • Dielectric Constant: 9.6
  • Thermal Conductivity: a~4.2 W/cm·K@298K
  • (N-type, 0.02 ohm.cm) c~3.7 W/cm·K@298K
  • Thermal Conductivity: a~4.9 W/cm·K@298K
  • (Semi-insulating) c~3.9 W/cm·K@298K
  • Band-gap: 3.23 eV Band-gap: 3.02 eV
  • Break-Down Electrical Field: 3-5×10 6V/m
  • Saturation Drift Velocity: 2.0×105m/

Product Information

 High purity 4inch diameter Silicon Carbide (SiC) Substrate Specification

4 inch Diameter High Purity 4H Silicon Carbide Substrate Specifications

*The other specifications can be customized according to customer’s requirements

6 inch High-purity Semi-insulating 4H-SiC Substrates Specifications

* Defects limits apply to entire wafer surface except for the edge exclusion area. # The scratches should be checked on Si face only.

About  SiC Substrates Applications

About  SiC Substrates Applications

CATALOGUE   COMMON  SIZE     

  4H-N Type / High Purity  SiC wafer/ingots2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer
4 inch 4H N-Type SiC wafer/ingots
6 inch 4H N-Type SiC wafer/ingots
4H Semi-insulating /  High Purity SiC wafer2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer
4 inch 4H Semi-insulating SiC wafer
6 inch 4H Semi-insulating SiC wafer
6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot

 Customzied size for 2-6inch 

Sales & Customer Service               

Materials Purchasing

The materials purchasing department is responsible to gather all the raw materials needed to produce your product. Complete traceability of all products and materials, including chemical and physical analysis are always available.

Quality

During and after the manufacture or machining of your products ,quality control department is involved in making sure that all materials and tolerances meet or exceed your specification.

Service

We pride ourselves in having sales engineering staff with over 5 years experiences in the semiconductor industry. They are trained to answer technical questions as well as provide timely quotations for your needs.

we are at your side by any time when you have problem,and resolve it in 10hours.

What Is Silicon Carbide?

SiC semiconductors provide an innovative option for power electronic designers who are looking for improved system efficiency, smaller form factor and higher operating temperature in their products for industrial, transportation/automotive, medical, aerospace/aviation, defense and communication applications.

Key features of our SiC solutions:

  • Extremely low switching losses to improve system efficiency
  • High power density for smaller footprint to reduce size and weight
  • Three times more thermally conductive than silicon
  • Reduced sink requirements to achieve smaller size and lighter weight
  • High-temperature operation to improve reliability at increased power density