8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor

8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor

Products – Silicon Carbide Wafer

• High Light：200mm Polishing Silicon Carbide, Sic Chip Semiconductor, 8inch Sic Semiconductor
• Material：SiC Single Crystal 4H-N Type
• Grade：Dummy /Production Grade
• Thicnkss：0.35mm 0.5mm
• Suraface：Double Side Polished
• Application：Device Maker Polishing Test
• Diameter：200±0.5mm
• Place of Origin：CHINA
• Brand Name：ZMKJ
• Model Number：8inch sic wafers 4h-n
• Minimum Order Quantity：1pcs
• Price：by case
• Packaging Details：single wafer package in 100-grade cleaning room
• Delivery Time：1-6weeks
• Payment Terms：T/T, Western Union, MoneyGram
• Supply Ability：1-50pcs/month

xinkehuioffers the best prices on the market for high-quality silicon carbide wafers and substrates up to six (6) inch diameter with both N type and Semi-insulating types. Our SiC wafers have been widely used by small and large semiconductor device companies as well as research labs worldwide.Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  

Our company supports custom Size Ceramic Substrate / Silicon Carbide Ceramic Excellent CorrosionSingle crystal single side polished silicon wafer sic wafer polishing wafer manufacturer Silicon Carbide SiC Wafer4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer/ Customzied as-cut sic wafers

About Silicon Carbide (SiC)Crystal  

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor—— Description

8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor——product information

Wide Energy Bandgap (eV)

4H-SiC: 3.26 6H-SiC: 3.03 GaAs: 1.43 Si: 1.12

Electronic devices formed in SiC can operate at extremely high temperatures without suffering from intrinsic conduction effects because of the wide energy bandgap. Also, this property allows SiC to emit and detect short wavelength light which makes the fabrication of blue light emitting diodes and nearly solar blind UV photodetectors possible.

High Breakdown Electric Field [V/cm (for 1000 V operation)]

4H-SiC: 2.2 x 106* 6H-SiC: 2.4 x 106* GaAs: 3 x 105 Si: 2.5 x 105

SiC can withstand a voltage gradient (or electric field) over eight times greater than than Si or GaAs without undergoing avalanche breakdown. This high breakdown electric field enables the fabrication of very high-voltage, high-power devices such as diodes, power transitors, power thyristors and surge suppressors, as well as high power microwave devices. Additionally, it allows the devices to be placed very close together, providing high device packing density for integrated circuits.

High Thermal Conductivity (W/cm · K @ RT)

4H-SiC: 3.0-3.8 6H-SiC: 3.0-3.8 GaAs: 0.5 Si: 1.5

SiC is an excellent thermal conductor. Heat will flow more readily through SiC than other semiconductor materials. In fact, at room temperature, SiC has a higher thermal conductivity than any metal. This property enables SiC devices to operate at extremely high power levels and still dissipate the large amounts of excess heat generated.

High Saturated Electron Drift Velocity [cm/sec (@ E ≥ 2 x 105 V/cm)]

Product show:

4H-SiC: 2.0 x 107 6H-SiC: 2.0 x 107 GaAs: 1.0 x 107 Si: 1.0 x 107
SiC devices can operate at high frequencies (RF and microwave) because of the high saturated electron drift velocity of SiC.

About xinkehui Company

xinkehui can provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2-6 inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .